Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2

Acceptance test for SiO2 deposition:

.	Acceptance Criteria	Acceptance Result 1	Acceptance Result 2
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	100 mm SSP Si wafer 525+-25 µm thick	100 mm SSP Si wafer 525+-25 µm thick
Material to be deposited	SiO2 The purpose of the SiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material.	SiO2	SiO2
Deposition thickness	222nm	~215nm	224nm
Deposition rate	6 nm/min	7.42nm/min +- 0.04nm/min One standard deviation	7.73nm/min Only made once
Thickness uniformity	<+-1%	+-(0.46% +-0.10%)	+-0.45%
Reproducibility	<+-1.5%	+-0.6%	Not measured
Stress	<500MPa	~600MPa	475MPa

Other results

Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= 0.6nm