Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide/IBSD of TiO2

Acceptance test for TiO2 deposition:

.	Acceptance Criteria	Acceptance Results recipe 1	Acceptance Results recipe 2
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	100 mm SSP Si wafer 525+-25 µm thick	100 mm SSP Si wafer 525+-25 µm thick
Material to be deposited	TiO2 The purpose of the TiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses):1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material.	TiO2	TiO2
Deposition thickness	147nm	~184 nm	121 nm
Deposition rate	2.8 nm/min	3.54nm/min +- 0.03nm/min One stdev - wafer to wafer	3.03nm/min Only done once
Thickness uniformity	<+-1%	<+-1.00%	<+-0.90%
Reproducibility	<+-1.5%	+-0.9% on 5 wafers in a row	not tested
Stress	<500MPa	~300MPa	Not measured expect ~300MPa

Other results

Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= ~1nm