Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide/IBSD of TiO2

Acceptance test for TiO2 deposition:

.	Acceptance Criteria	Acceptance Results
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	.
Material to be deposited	TiO2 The purpose of the TiO2 is to be part of a mirror: 5 quarterwavelength pairs of SiO2 TiO2 Extra quarterwavelength layer of TiO2 5 quarterwavelength pairs of SiO2 TiO2 Design wavelength (for refractive indices and layer thicknesses): 1300nm The acceptance criteria is set up for the single SiO2 and TiO2 layers.	.
Mask information	E-beam resist mask: 400nm of spin coated ZEP520A e-beam resist Patterned by E-beam lithography	.
Features to be etched	300nm - 3µm dots and lines + a square of 200µmx200µm	.
Etch depth	300nm	~272 nm
Etch rate	>80nm/min	54.5nm/min +- 0.6nm/min (one standard deviation)
Etch rate uniformity	<+-2%	+-(0.2% +-0.2%)
Reproducibility	<+-2%	+-0.9%
Selectivity (Au etch rate/ZEP etch rate)	At least 1:1	1.2:1
Etch profile	70-90dg.	75dg