Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2
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Revision as of 11:50, 8 November 2007 by 192.38.87.76 (talk) (New page: RIE (Reactive Ion Etch) can be used for etching silicon - both crystalline and polycrystalline silicon. This can be done with a simple photoresist as masking material. The etch can be is...)
RIE (Reactive Ion Etch) can be used for etching silicon - both crystalline and polycrystalline silicon. This can be done with a simple photoresist as masking material. The etch can be isotropic or anisotropic with vertical sidewalls depending on the process recipe and the masking material and geometry. The Si is etched by flour radicals that are created from SF6(g)in a RF generated plasma.