Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE

For a general introduction to RIE at Danchip see RIE (Reactive Ion Etch)

Etching of silicon nitride using RIE can be done with several recipes. It can be etched by our standard silicon etch recipe: OH_PolyA which is based on SF6. It can also be etched using the recipe 1Nitride which is based on CHF3. The difference of these two etches has not been investigate in details. Look in the table below to see what we know

Some RIE recipes for etching of silicon nitride:

Name	SF6 flow	O2 flow	CHF3 flow	N2 flow	Pressure	Power
OH_PolyA	32 sccm	8 sccm			80 mTorr	30 W
BGE-NITR			8 sccm	32 sccm	38 mTorr	50 W