Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2

Recipes and results - CHF₃ tests

Tests performed with AZ5214E resist:

Recipe	Recipe parameters	Duration (min)	Date	SEM picture	Redeposition - top view	Profile angles	Etch rate in SiO2	Etch rate in resist (AZ5214E inverse)	Selectivity (SiO2:resist)
CHF3_t1	CHF3= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C	12:00	04/09/2023				69.7 nm/min +/- 10.5%	57.3 nm/min +/- 12.9%	1.22
CHF3_t2	CHF3= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C	25:00	04/09/2023				26.7 nm/min +/- 11.9%	24.2 nm/min +/- 21.1%	1.1
CHF3 t2	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C	10:00	22/09/2023				9,7 nm/min +/- 34.4%	1,8 nm/min +/- 46.5%	5.4
CHF3_t1	CHF3= 22.5 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C	10:00	12/09/2023				59,6 nm/min +/- 12.9%	47,5 nm/min +/- 21.5%	1.25
CHF3_t1	CHF3= 22.5 sccm O2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C	10:00	11/09/2023				60,6 nm/min +/- 10.1%	130,8 nm/min +/- 8.8%	0.46
CHF3 t1	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C	10:00	20/09/2023				47,3 nm/min +/- 12%	26,4 nm/min +/- 17,4%	1.8
CHF3 t1	CHF3= 22.5 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C	10:00	22/09/2023				36,5 nm/min +/- 10.6%	17,5 nm/min +/- 13.9%	2.09
CHF3 t1	CHF3= 35 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C	10:00	22/09/2023				42 nm/min +/- 15.4%	23,8 nm/min +/- 22.2%	1.76
CHF3 t1	CHF3= 22.5 sccm CF4= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C	10:00	22/09/2023				75,8 nm/min +/- 13.1%	74,9 nm/min +/- 10.8%	1.01
CHF3 t1	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 25mTorr Temp= 20°C	10:00	22/09/2023				-	-	no etch done, polymer deposited
CHF3 t1	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 0°C	10:00	22/09/2023				48 nm/min +/- 11.2%	23,3 nm/min +/- 13.7%	2.06

Tests performed with 915nm UVN resist + 88nm BARC:

Recipe	Recipe parameters	Duration (min)	Date	SEM picture	Profile angles	Etch rate in SiO2	Etch rate in resist (AZ5214E inverse)	Selectivity (SiO2:resist)
CHF3_t1	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 30W Press= 2.5mTorr Temp= 20°C
CHF3_t1	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 20°C
CHF3_t1	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 0°C
CHF3_t2	CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C