Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2
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Revision as of 14:56, 18 July 2023 by Mfarin (talk | contribs) (→Results when etching a non-patterned wafer)
Unless otherwise stated, all content in this section was done by Maria Farinha@DTU Nanolab, May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
Parameter | Recipe name: SiO2_ICP |
---|---|
Coil Power [W] | 1000 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
C4F8 flow [sccm] | 10 |
H2 flow [sccm] | 28 |
Pressure [mTorr] | 2.5 |
Results when etching a non-patterned wafer
Material to be etched | Recipe: SIO2_ICP | SIO2_ICP on stoic Nit | SIO2_ICP on low-stress Nit | SIO2_ICP on Si |
---|---|---|---|---|
Etch rate in SiO2 | 155 nm/min in the center, 125nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
194 nm/min
(24052023 mfarin @ DTU nanolab) |
190 nm/min
(24052023 mfarin @ DTU nanolab) |
|
Etch rate in resist (AZ 5214E) | 108 nm/min in the center, 98nm/min in the edges
(03052023 mfarin @ DTU nanolab) |
|||
Selectivity (SiO2:resist) | 1.45 | |||
Etch rate in silicon |
Results when etching a patterned wafer
- More tests will be done regarding silicon and silicon nitride, since this recipe can be used for overetch.