Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2

This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.

Parameter	Recipe name: SiO2_ICP
Coil Power [W]	1000
Platen Power [W]	200
Platen temperature [oC]	20
C4F8 flow [sccm]	10
H2 flow [sccm]	28
Pressure [mTorr]	2.5

Results when etching a patterned wafer

Material to be etched	Recipe: SIO2_ICP	SIO2_ICP on stoic Nit	SIO2_ICP on low-stress Nit	SIO2_ICP on Si
Etch rate in SiO2	155 nm/min in the center, 125nm/min in the edges (03052023 mfarin @ DTU nanolab)	194 nm/min	190 nm/min
Etch rate in resist (AZ 5214E)	108 nm/min in the center, 98nm/min in the edges (03052023 mfarin @ DTU nanolab)
Selectivity (SiO2:resist)	1.45
Etch rate in silicon
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Further tests will be done, testing these recipes' etch rates regarding silicon and silicon nitride, since this recipe can be used for overetch.