Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2
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Revision as of 14:25, 15 May 2023 by Mfarin (talk | contribs) (→Results when etching a piece of wafer on a Si carrier)
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
| Parameter | Recipe name: SiO2_ICP |
|---|---|
| Coil Power [W] | 150 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| C4F8 flow [sccm] | 36 |
| H2 flow [sccm] | 13 |
| He flow [sccm] | 0 |
| Pressure [mTorr] | 2.5 |
Results when etching a patterned wafer
| Material to be etched | Recipe: SIO2_ICP | Testing othe etch rate in nitride |
|---|---|---|
| Etch rate in SiO2 | 22.1 nm/min | ? |
| Etch rate in PECVD nitride | . | 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729) |
| Etch rate in LPCVD nitride | . | 23.7 nm/min in the middle, 17 nm/min close to the edge |
| Etch rate in resist (MIR) | 12.5 nm/min | 13.9 nm/min |
| Selectivity (SiO2:resist) | 1.8 | 1.9 |
| Etch rate in silicon |
| |
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