Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2
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This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
Parameter | Recipe name: 1SiO2_02 | Recipe name: 1SiO2_03 | Testing other settings to increase etch rate in nitride |
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Coil Power [W] | 150 | 100 | 150 |
Platen Power [W] | 25 | 25 | 25 |
Platen temperature [oC] | 20 | 20 | 20 |
C4F8 flow [sccm] | 36 | 10 | 20 |
H2 flow [sccm] | 13 | 10 | 0 |
He flow [sccm] | 0 | 100 | 100 |
Pressure [mTorr] | 2.5 | 2.5 | 2.5 |
Results when etching a piece of wafer on a Si carrier
Results when etching a whole wafer on an Al carrier
Material to be etched | Recipe: SiO2_ICP |
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Etch rate in SiO2 | 22.1 nm/min |
Etch rate in resist (MIR) | 16.6 nm/min |
Selectivity (SiO2:resist) | 1.3 |
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Material to be etched | Recipe: SIO2_ICP | Testing othe etch rate in nitride |
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Etch rate in SiO2 | 22.1 nm/min | ? |
Etch rate in PECVD nitride | . | 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729) |
Etch rate in LPCVD nitride | . | 23.7 nm/min in the middle, 17 nm/min close to the edge |
Etch rate in resist (MIR) | 12.5 nm/min | 13.9 nm/min |
Selectivity (SiO2:resist) | 1.8 | 1.9 |
Etch rate in silicon |
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