Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2
Jump to navigation
Jump to search
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.
| Material to be etched | Recipe: 1SiO2_02 *This recipe is no longer stable. | Recipe: 1SiO2_03 | Testing other settings to increase etch rate in nitride |
|---|---|---|---|
| Etch rate in SiO2 | 22.1 nm/min | 26.8 nm/min | ? |
| Etch rate in PECVD nitride | . | 20.8nm/min (kabi@nanolab 20190301) - ~0nm/min (ecsj@nanolab 20210729) | ? |
| Etch rate in LPCVD nitride | . | only around 6 nm/min (20190820) | 23.7 nm/min in the middle, 17 nm/min close to the edge |
| Etch rate in resist (MIR) | 12.5 nm/min | 13.9 nm/min | Not tested properly (still more than 1 µm left (1.5µm MIR) after 12 min |
| Selectivity (SiO2:resist) | 1.8 | 1.9 | ? |
| Etch rate in silicon |
|
||
| Profile Images |   
|
  
|
Profile not analyzed |