Specific Process Knowledge/Etch/ICP Metal Etcher

Etching of nanostructures in silicon using the ICP Metal Etcher

The starting point

Break	Gas	Cl2 20 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	600 W CP, 200 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	15 secs
Main	Gas	HBr 20 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 50 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	? secs

ER 200 nm/min, 3:1 over resist. Vertical profile. To improve selectivity to oxide under-layers you can add a small amount of O2 ( e.g 2 sccm if the MFC is small enough). This should not give an undercut.

• Standardization images of the shallolr recipe
• 
  The profile of a 2 $\mu$m trench
• 
  The profile of a 50 $\mu$m trench