Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch
< Specific Process Knowledge | Etch | DRIE-Pegasus | Pegasus-4
Jump to navigation
Jump to search
The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
| Parameter | Recipe name: Slow Etch |
|---|---|
| Coil Power [W] | 350 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| He flow [sccm] | 0 |
| CF4 flow [sccm] | 45 |
| Pressure [mTorr] | 3 |
| Typical results | Test Results |
|---|---|
| Etch of Si3N4 with DUV mask | |
| Etch rate of Si3N4 | ~nm/min |
| Etch rate of Silicon | ~nm/min |
| Etch rate of DUV resist] | ~nm/min
|
| Profile [o] |