Specific Process Knowledge/Thin film deposition/TiO2 deposition in Sputter System (Lesker)

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TiO2 Sputtering

This page presents the results of TiO2 deposition using DC reactive sputtering in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is Ti, and O2 gas is added as reactive gas. Source #3 (DC) was used.

The fabrication and characterization described below were conducted in 2021 by Evgeniy Shkondin, DTU Nanolab. The prepared samples were investigated by the X-ray Reflectivity method. The focus of the study was the deposition conditions.


The process recipe in a Sputter-System (Lesker) is following:


  • Deposition type: DC-R
  • Power: 20 W. Such a low power can be used for doping purposes during transparent conducting oxide thin film production (such as doped ZnO or similar). For other applications higher powers are preferable.
  • Pressure: 3 mTorr
  • Gas: 10% of O2 in Ar
  • Deposition time: 28800s which corresponds to 8 hours.
  • Temperature: 20°C (no heating)
  • Measured DC bias: 322V


  • Deposition Rate: 0.00024 nm/s



XRR-measurement

Layer parameter list
Layer name Thickness (nm) Density (g/cm3) Rougness (nm) Delta Beta
Moisture 0.33 2.33 1.05 7.5913e-6 1.7628e-7
TiO2 (sputtered)

6.99

3.62 0.31 1.1147e-5 5.4574e-7
SiO2 (native oxide) 1.32 2.10 0.57 6.8506e-6 1.5908e-7
Si (wafer) 2.328 0.41 7.5796e-6 1.7601e-7