Specific Process Knowledge/Thin film deposition/DiamondCVD
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SEKI Diamond CVD
The SEKI AX5250S is a Microwave Plasma Chemical Vapor Deposition (MPCVD) system for growth of diamond thin films. The system is fitted with the following gases for diamond growth: hydrogen, methane, and oxygen.
Depending on the starting material both polycrystalline and single crystalline diamond can be grown. Diamond has a lattice constant of 3.567 Å, which is not easily matched to other materials, and therefore in general diamond growth must be seeded by diamond as nucleation sites.
For single crystalline diamond this means that diamond layers in most cases must be grown on top of single crystal diamonds. For polycrystalline diamond, almost any material will do as long as it can withstand a growth temperature of 800 °C. It just needs to be seeded with nano diamonds. The seeding can happen by immersion into solution, by polishing, or by spray coating with nano diamonds.
The user manual, APV, technical information, and contact information can be found in LabManager:
More details
Equipment | SEKI AX5250S | |
---|---|---|
Purpose | Diamond growth |
|
Parameters |
H2 |
1000 sccm |
CH4 |
50 sccm | |
O2 |
20 sccm | |
Operating pressure |
>200 Torr (usually about 125 Torr for diamond growth) | |
Power |
5000 W | |
Temperature |
700-900 °C | |
Process | Growth rate |
About 8 Å/s (3 μm/hr) |
Max thickness |
About 100 μm | |
Uniformity |
OK up to 50 mm diameter | |
Substrates | Substrate size |
up to 100 mm wafers, 50 mm preferred |
Allowed materials |
Ask |