Specific Process Knowledge/Thin film deposition/Deposition of Germanium

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Deposition of Germanium

Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.

Thermal deposition


Ge deposition equipment comparison


Thermal evaporation (Wordentec) E-beam evaporation (Physimeca) E-beam evaporation (Temescal) Sputtering (Lesker) Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description Thermal deposition of Ge E-beam deposition of Ge E-beam deposition of Ge Sputter deposition of Ge Sputter deposition of Ge
Pre-clean RF Ar clean - Ar ion beam clean RF Ar clean RF Ar clean
Layer thickness 10Å to about 2000Å (in total distributed on all loaded wafers) 10Å to about 3000Å 10Å to about 1000 nm 10Å to at least 1000 Å 10Å to ?
Deposition rate From 0.4 Å/s up to about ~2Å/s 5 Å/s From 1 Å/s up to 5 Å/s Depends on deposition parameters Depends on deposition parameters
Batch size
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers or

Many small pieces

  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
  • Up to 4 x 6" wafer or
  • 3x 8" wafers (ask for special holder)
  • Many smaller pieces
  • 1x6" wafer or
  • 1x4" wafer or

smaller pieces

  • 10x6" or 4" wafers
  • many smaller pieces
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • III-V materials
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet
  • Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheets
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • Almost any as above
  • Almost any as above
Comment Recommended for unexposed e-beam resist