Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE
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Revision as of 08:47, 29 January 2009 by BGE (talk | contribs) (→Etching of micro structures in Silicon Oxide with photoresist or (poly)silicon as masking material)
Because the AOE is owned by Hymite and the status of the future accessibility to this equipment is unknown - DANCHIP has not reserved much time to check and develop processes on the AOE.
Etching of micro structures in Silicon Oxide with photoresist or (poly)silicon as masking material
Parameter | Si mask | Resist mask |
---|---|---|
Coil Power [W] | 1300 | 1000 |
Platen Power [W] | 500 | 300 |
Platen temperature [oC] | 60 | 0 |
He flow [sccm] | 300 | 174 |
CF flow [sccm] | 18 | 10 |
H flow [sccm] | 0 | 8 |
Pressure [mTorr] | 4 | 4 |
Typical results | Si mask non-confirmed result | Si mask DANCHIP result | Resist mask non-confirmed result | Resist mask DANCHIP result |
---|---|---|---|---|
Etch rate [nm/min] | 500 | . | 300 | 280, 300 |
Selectivity [:1] | 20 | . | 4 | 3.2, 4 |
Profile [o] | >88 | . | >88 | . |
Etching of micro structures in Silicon Oxide with Aluminium as masking material
Parameter | Al mask |
---|---|
Coil Power [W] | 1800 |
Platen Power [W] | 180 |
Platen temperature [oC] | 60 |
CF flow [sccm] | 80 |
O flow [sccm] | 10 |
Pressure [mTorr] | 6 |
Typical results | Al mask non-confirmed result | Al mask DANCHIP result |
---|---|---|
Etch rate [nm/min] | >500 | . |
Selectivity [:1] | >50 | . |
Profile [o] | >88 | . |
Etching of sub-micro structures (trenches or holes) in Silicon Oxide with (poly)silicon or Aluminium as masking material
Parameter | Si mask | Al mask | Very thin Al mask |
---|---|---|---|
Coil Power [W] | 1600 | 1100 | 2000 |
Platen Power [W] | 200 | 500 | 140 |
Platen temperature [oC] | 0 | 60 | 60 |
He flow [sccm] | 300 | 50 | 60 |
CF flow [sccm] | 6 | 26 | 29 |
H flow [sccm] | 18 | 0 | 0 |
O flow [sccm] | 0 | 0 | 16 |
Pressure [mTorr] | 4 | 8 | 3 |
Typical results | Si mask non-confirmed result | Si mask DANCHIP result | Al mask non-confirmed result | Al mask DANCHIP result | Thin Al mask non-confirmed result | Thin Al mask DANCHIP result |
---|---|---|---|---|---|---|
Etch rate [nm/min] | 200 | . | 275 | . | . | . |
Selectivity [:1] | 11 | . | >50 | . | Should be larger than for the other Al mask recipe | . |
Profile [o] | 86 | . | 90 | . | 90 | . |