Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES/Details SiO2 100

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Conditioning the chamber

An O2 clean was made before each test set. That means before Rep01, Rep03 and Rep05. The recipes were exactly the same, but the etch rate decrease in the time (with changed conditioning we expect).


Process parameters
Sample number Run number Time Total flow rate Gas ratio Power Pressure CHF3 flow O2 flow SiO2 Link to the process log Txt
Thickness before Thickness after etch rate (nm/min)
- Rep01 5:41 17 - 100 20 17 0 411nm 59,81nm 61,8nm/min Process log entry [1]
- Rep02 3:00 17 - 100 20 17 0 411nm 258,23nm 50,92nm/min Process log entry [2]
Process parameters
Sample number Run number Time Total flow rate Gas ratio Power Pressure CHF3 flow O2 flow SiO2 Link to the process log Txt
Thickness before Thickness after etch rate (nm/min)
- Rep03 3:00 17 - 100 20 17 0 411nm 238,88nm 57,37nm/min Process log entry [3]
- Rep04 3:00 17 - 100 20 17 0 411nm 256,24nm 51,59nm/min Process log entry [4]
Process parameters
Sample number Run number Time Total flow rate Gas ratio Power Pressure CHF3 flow O2 flow SiO2 Link to the process log Txt
Thickness before Thickness after etch rate (nm/min)
- Rep05 3:00 17 - 100 20 17 0 411nm 232,16nm 59,61nm/min Process log entry [5]
- Rep06 3:00 17 - 100 20 17 0 411nm 258,07nm 50,98nm/min Process log entry [6]
- Rep07 3:00 17 - 100 20 17 0 411nm 264,22nm 48,93nm/min Process log entry [7]