Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD new page

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HfO2 standard recipe

HfO2 deposition using TEMAHf and H2O precursors

The following tables show the recipe and boost settings for the TEMAHf precursor:

TEMAHf H2O
Nitrogen flow 150 sccm 120 sccm
Pulse time 1.6 s 0.1 s
Purge time 8.0 s 4.0 s


Boost flow 500 sccm
Pre-empty 0.5 s
Master fill 1.2 s
Post-empty 0 s


HfO2 deposition at 150 oC

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