Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Sputter rates for Al

From LabAdviser
Revision as of 14:35, 6 October 2008 by Kn (talk | contribs) (New page: == Deposition rate == Depening on the settings (pressure and effect) during the sputtering process, the uniformity and grain size of the deposited layer will be different. The depositio...)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

Deposition rate

Depening on the settings (pressure and effect) during the sputtering process, the uniformity and grain size of the deposited layer will be different.


The deposition rate will also change with the settings.


Pressure 1*103 mbar, Effect 150 W

The rate is established to be 1.6 Å/s (in the center of the wafer, 1.4 Å/s at the edge).

This corresponds to a deposition time of 1 minute 4 seconds for deposition of 10 nm.