Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD

Feedback to this page: click here

The ALD temperature window for HfO2 is 150 - 300^oC. The TEMAHf precursor is heated to 120 or 125^oC (T210) and the heater (T211) is set to 140 ^oC during deposition. Remember to set the values in the "MANUAL" tab and to change them to back after deposition. These values may not be exceeded to prevent precursor decomposition.

HfO₂ standart recipe

HfO₂ deposition using TEMAHf and H₂O precursors

The test was done with 300 cycles at 250 ^{where the growth rate was measured to be 0.0804 nm/cycle.}

	TiCl4	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.1 s
Purge time	3.0 s	4.0 s

• 
  Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.