Specific Process Knowledge/Lithography/ARP617

From LabAdviser

These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.


Process Flow

Test of copolymer AR-P 617.05; a positive e-beam resist from AllResist. This copolymer is meant to be used as a sacrificial layer in a bi- or tri-layer e-beam resist stack (i.e. bottom layer). The copolymer adheres well on many substrates and can be dry-etched isotropically (to create under-cut) and anisotropically by reactive ion etch.

Equipment Process Parameters Comments Initials and date
Pretreatment
4" Si wafers No Pretreatment TIGRE, 13-06-2014
Spin Coat
Spin Coater Manual, LabSpin, A-5 AR-P 617.05 AllResist E-beam resist

60 sec at various spin speed. Acceleration 2000 s-2, softbake 10 min at 200 deg Celcius

Resist poured by use of disposable pipette TIGRE, 13-06-2014
Characterization
Ellipsometer VASE B-1 9 points measured on 100 mm wafer ZEP program used; measured at 70 deg only TIGRE, 13-06-2014

Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.

9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

AllResist AR-P 617.05 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 13-06-2014
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 2000 256.70 0.96
3000 2000 208.33 1.24
4000 2000 185.41 0.50
5000 2000 168.34 0.88
6000 2000 161.90 1.99