Specific Process Knowledge/Bonding

Choose bonding method

.	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials).	For bonding two identical materials eg. Si/Si.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310 $^{o}$ C to 400 $^{o}$ C.	Depending on defects 50 $^{o}$ C to 400 $^{o}$ C.	Depending on the voltage 300 $^{o}$ C to 500 $^{o}$ C Standard is 400 $^{o}$ C.
Annnealing temperature	No annealing	1000 $^{o}$ C in the bond furnace C3	No annealing
Materials possible to bond	Au/Si , Au/Sn, Ni/Si	Si/Si, SiO $_{2}$ /SiO $_{2}$	Si/Pyrex (glass)
Substrate size	Up to 6"	Up to 6"	Up to 6"
Resolution z	1Å or 25Å	1Å, 10Å or 20Å	<1Å - accuracy better than 2%
Max. scan depth [µm] (as a function of trench width W)	0.87(W[µm]-5µm)	1.2(W[µm]-5µm)	~1 with standard cantilever.
Tip radius	5 µm 60^o cone	5 µm 45^o cone	<12 nm on standard cantilever
Stress measurement	Can be done	Can be done	Cannot be done
Surface roughness	Can be done on a line scan	Can be done on a line scan	Can be done on a selected surface area