Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al₂O₃

Recipe: Al2O3 LT

Temperature: 80-150 ^oC

	TMA	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.2 s
Purge time	5.0 s	10.0 s

Deposition rate: 0.089 nm/cycle (@120 ^oC)

This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature.

Al2O3 deposition at 120 oC

Deposition conditions at 120 oC for Al2O3 LT recipe Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm 250 24.83 1.22 0.16 1.61 500 45.48 1.35 0.41 1.63 750 68.03 1.42 0.59 1.63 1000 90.66 1.74 0.94 1.63

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The uniformity, thickness, refractive index has been obtained using Ellipsometer VASE.

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  Measured thickness distribution across 100 mm wafer.
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  Measured refractive index distribution across 100 mm wafer.

Low temperature deposition of TiO₂

Recipe: TiO2 LT

Temperature: 80-150 ^oC

	TiCl4	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.2 s	0.2 s
Purge time	10.0 s	15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 ^oC)

This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature. The deposited TiO₂ layers are amorphous.

TiO2 deposition at 120 oC

Deposition conditions at 120 oC for TiO2 LT recipe Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm 250 10.17 2.19 0.14 2.18 500 23.12 1.80 0.23 2.40 750 34.13 1.87 0.39 2.39 1000 46.13 1.78 0.50 2.39

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Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 ^oC

Al₂O₃/TiO₂ multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 ^oC

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  Al₂O₃/TiO₂ multilayers grown on silicon trenches.

Evgeniy Shkondin, DTU Danchip, 2014-2016.