Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask/Striation
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Revision as of 10:37, 18 April 2016 by Bghe (talk | contribs) (→Sidewall roughness effected by UV curing and heat treatment of AZ5214E resist 70px)
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Striation: Side wall roughness
- Striation with different resists used
Az resist
Az resist
Az resist
Az resist - profile after etch
Mir resist
Mir resist
Mir resist
Mir resist - profile after etch
nLof
nLof
nLof
nLof resist - profile after etch
Roughness of the resist after etch measured with the AFM
AZ5214E:Ra=3.98nm, Rmax=33,0nm
AZ MIR: Ra=4.55nm, Rmax=36.3nm
AZ nLof 2020: Ra=3.31nm, Rmax=28.0nm
Sidewall roughness effected by UV curing and heat treatment of nLof resist 
| AOE etch with nLof resist with different treatments | |||||
| 1 | 2 | 3 | 4 | 5 | |
|---|---|---|---|---|---|
| Treatment | No treatment before AOE etch | No treatment after 5min AOE etch | Flood-E 70s + 1min@110dg | 5min@150dg | Flood-E 70s + 60s@110dg + 5min@150dg |
| SEM image | 
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|
|
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| AFM roughness scan | Ra=2.1nm Rmax=25.1nm 
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Ra=3.31nm Rmax=28.0nm 
|
Ra=3.34nm Rmax=26.8nm 
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Ra=2.45nm, Rmax=19.4nm 
|
Ra=2.52nm, Rmax=23.7nm 
|
| D | D1 | D2 | D3 | D4 | D5 |
Sidewall roughness effected by UV curing and heat treatment of AZ5214E resist
| AOE etch with nLof resist with different treatments | |||||
| 1 | 2 | 3 | 4 | ||
|---|---|---|---|---|---|
| Treatment | No treatment before AOE etch | No treatment after 5min AOE etch | Flood-E 70s + 1min@110dg | Flood-E 70s + 60s@110dg + 5min@150dg | |
| SEM image |
|
|
|
| |
| AFM roughness scan | Ra=2.1nm Rmax=25.1nm
|
Ra=3.31nm Rmax=28.0nm
|
Ra=3.34nm Rmax=26.8nm
|
Ra=2.45nm, Rmax=19.4nm
| |
| D | D1 | D2 | D3 | D4 | |