Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec

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Deposition rate

Depening on the settings (pressure and effect) during the sputtering process, the uniformity and grain size of the deposited layer will be different (see Deposition of Chromium)

The deposition rate will also change with the settings.

Pressure $1*10^{-3}$ mbar, Effect 150 W

The rate is established to be 1.1 Å/s (in the center of the wafer, 1.0 Å/s at the edge).

This corresponds to a deposition time of 1 minute 34 seconds for deposition of 10 nm.

Pressure $4*10^{-3}$ mbar, Effect 300 W

The rate is established to be 2.3 Å/s (in the center of the wafer, 2.0 Å/s at the edge).

This corresponds to a deposition time of 44 seconds for deposition of 10 nm.