Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/PolySi mask
High etch rate recipe
| Parameter | Recipe name: SiO2_psi (SiO2 etch with pSi mask) |
|---|---|
| Coil Power [W] | 1300 |
| Platen Power [W] | 500 |
| Platen temperature [oC] | 60 |
| He flow [sccm] | 300 |
| C4F8 flow [sccm] | 18 |
| H2 flow [sccm] | 0 |
| Pressure [mTorr] | 4 |
| Typical results | PolySi mask - tested by Yunhong Ding @fotonik | PolySi mask - tested Feb. 2012 by bge@danchip |
|---|---|---|
| Etch rate | ~0.55 µm/min | 0.50 µm/min |
| Selectivity | 1:~10 | 1:17 |
| SiO2 etch uniformity | not tested | ±4.5% over a 100mm wafer |
| Profile [o] | not tested | see images |
| Images | . | See here |
| Comments | . | Line width reduction is about 2.5µm when etching 12.5µm down. See the images to get more info on this |