Specific Process Knowledge/Lithography/EBeamLithography/RaithElphyManual
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Revision as of 20:41, 29 September 2015 by Tigre (talk | contribs) (→Mounting of chips or wafers into chamber)
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Purpose, location and technical specifications
The Raith Elphy system is a pattern generator built onto the LEO Scanning Electron Microscope (SEM) in cleanroom F-2. All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system.
Techical Specification
The system can be characterized as follows:
- Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed).
- The acceleration voltage is maximum 25 kV.
- The maximum field-size without stitching is X µm x Y µm.
- The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup.
Mounting of chips or wafers into chamber
- Ventilate the SEM chamber
- Mount your chips(s)
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| Chip holder to Raith Elphy E-beam writer system; the holder has three clamps to hold up to 3 chips and a Faraday's cup to measure beam current. |