Specific Process Knowledge/Lithography/EBeamLithography/RaithElphyManual

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Purpose, location and technical specifications

The Raith Elphy system is a pattern generator built onto the LEO Scanning Electron Microscope (SEM). All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system.

Location

The system is located in cleanroom F-2.

Techical Specification

The system can be characterized as follows:

• Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed).
• The acceleration voltage is maximum 25 kV.
• The maximum field-size without stitching is X µm x Y µm.
• The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup.