Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange
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Comparison of continuous processes
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S004592 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV | 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen | S004593 | 6" wafer |   
|
S004679 | Wafer centre |
|
| S004593 | Wafer edge |
|
S004679 | Wafer edge |
| ||
Comparison of switched processes
| Recipe | Step | Temp. | Deposition step | Etch step | Process observations | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | HW | Runs | Key words | |||
| - | ||||||||||||||||||
| base-A | - | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | - | 1 | |
| base-B | - | 30 | 2.15 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | - | 1 | |
| base-C | - | 30 | 2.15 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | - | 1 | |