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Hotplates

90 C 4" hotplate

This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist.

110 C 4" hotplate

The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec.

Hotplate: 90-110C

Hotplate: 90-110C is used for baking of 2" - 6" wafers.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C

SU8 hotplates

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Ovens

90 C oven

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

120 C oven

120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.

250 C oven for pretreatment

The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap.

The user manual, and contact information can be found in LabManager: Oven 250C

250 C oven for burning resist

This oven is used for "burning" the resist, therefore not considered clean.