Specific Process Knowledge/Lithography/CSAR

From LabAdviser


Resist Polarity Manufacturer Comments Technical reports Spinner Developer Rinse Remover Process flows (in docx-format)
CSAR Positive AllResist Standard positive resist, very similar to ZEP520. Allresist_CSAR62_English.pdf‎,, CSAR_62_Abstract_Allresist.pdf‎ Manual Spinner 1 (Laurell), Spin Coater Labspin X AR 600-54/6, MIBK:IPA IPA, H2O 1165 Remover Process_Flow_CSAR.docx‎


Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.


Process Flow

Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).

Equipment Process Parameters Comments
Pretreatment
4" Si wafers No Pretreatment
Spin Coat
Spin Coater Manual, LabSpin, A-5 AR-P 6200/2 AllResist E-beam resist

60 sec at various spin speed. Acceleration 4000 s-2, softbake 1 - 5 min at 150 deg Celcius

Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist here.
Characterization
Ellipsometer VASE B-1 9 points measured on 100 mm wafer ZEP program used; measured at 70 deg only
E-beam Exposure
JEOL 9500 E-beam writer, E-1 Dosepattern 15nm - 100nm,

dose 120-280 muC/cm2

Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
Development
Fumehood, D-3 60 sec in X AR 600-54/6,

60 sec rinse in IPA, N2 Blow dry

Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
Characterization
Zeiss SEM Supra 60VP, D-3 2-3 kV, shortest working distance possible, chip mounted with Al tape The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information.

Spin Curves

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.


Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by silver gray.


AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 4000 225.98 0.97
3000 4000 194.00 0.6
4000 4000 169.57 0.32
5000 4000 151.47 0.26
6000 4000 142.38 0.41
7000 4000 126.59 0.36


AllResist CSAR on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
3000 4000 201.61 1.20
4000 4000 173.89 0.64
5000 4000 155.91 0.65


AllResist CSAR 1:1 in anisole, Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 4000 83.48 0.49
3000 4000 67.12 0.41
4000 4000 58.64 0.44
5000 4000 53.13 0.39
6000 4000 48.76 0.38

SEM pictures of dosepatterns

wafer 6.13

Process Equipment Parameters Date and initials
Resist Fumehood D-3 AR-P 6200/2 AllResist E-beam resist diluted 1:1 in anisole TIGRE
Spin Coat Spin Coater LabSpin A-5 1 min @ X000 rpm, 2000 1/s2, softbake X min @ 150 degC, thickness ~XXnm TIGRE
E-beam exposure JEOL 9500 E-2 0.2 nA, aperture 5, dose 180-420 muC/cm2, Shot pitch 7-27 nm TIGRE
Develop Fumehood D-3 SX-AR 600-54/6 60 sec, 30 sec IPA rinse TIGRE
Sputter Coat Cressington 208HR, DTU CEN 3-5 nm Pt, sputtering TIGRE
Characterization Zeiss SEM Supra 60VP, D-3 3 kV, WD below 4mm, conducting tape close to pattern TIGRE




Wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
300 [muC/cm2] ACHK NOT READY


Wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
270 [muC/cm2] ACHK NOT READY
300 [muC/cm2] ACHK NOT READY


Wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
240 [muC/cm2] ACHK NOT READY
270 [muC/cm2] ACHK NOT READY
300 [muC/cm2] ACHK NOT READY


53 nm CSAR

The e-beam exposures presented here are written with 'SHOT A,10', i.e. a shot pitch of 5nm; this pitch works very well for large structures but not so well for 20nm or below. To illustrate this, ACHK screenshot are presented along with SEM inspection picures.


Process Equipment Parameters Date and initials
Resist Fumehood D-3 AR-P 6200/2 AllResist E-beam resist diluted 1:1 in anisole 16-06-2014 TIGRE
Spin Coat Spin Coater LabSpin A-5 1 min @ 5000 rpm, 4000 1/s2, softbake 2 min @ 150 degC, thickness ~53nm 16-06-2014 TIGRE
E-beam exposure JEOL 9500 E-2 0.2 nA, aperture 5, dose 207-242 muC/cm2, SHOT A,10 02-07-2014 TIGRE
Develop Fumehood D-3 SX-AR 600-54/6 60 sec, 60 sec IPA rinse 08-07-2014 TIGRE
Sputter Coat Cressington 208HR, DTU CEN 3-5 nm Pt, sputtering 09-07-2014 TIGRE
Characterization Zeiss SEM Supra 60VP, D-3 3 kV, WD below 4mm, conducting tape close to pattern 09-07-2014, TIGRE


50nm

dose [muC/cm2] 230 230 230 230 230


30nm

dose [muC/cm2] 219 230 242 ACHK


20nm

dose [muC/cm2] 207 219 230 242 253 ACHK


15nm

dose [muC/cm2] 242 253 276 ACHK

140 nm CSAR

Process Equipment Parameters Date and initials
Resist Fumehood D-3 AR-P 6200/2 AllResist E-beam resist 2013 (bottle opened)
Spin Coat Spin Coater LabSpin A-5 1 min @ 6000 rpm, 4000 1/s2, softbake 5 min @ 150 degC, thickness ~143nm 09-04-2014 TIGRE
E-beam exposure JEOL 9500 E-2 2 nA, aperture 5, dose 207-242 muC/cm2, SHOT A,10 10-04-2014 TIGRE
Develop Fumehood D-3 SX-AR 600-54/6 60 sec, 60 sec IPA rinse April/May-2014 TIGRE
Sputter Coat Cressington 208HR, DTU CEN 2-3 nm Pt, sputtering 22-05-2014 TIGRE
Characterization Zeiss SEM Supra 60VP, D-3 2 kV, WD below 4mm, conducting tape close to pattern 06-06-2014, TIGRE


50nm

dose [muC/cm2] 207 219 230 242


30nm

dose [muC/cm2] 207 219 230 242


20nm

dose [muC/cm2] 230 242 253
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/CSAR&oldid=15997"