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The SPTS III/V ICP in the Danchip cleanroom B-1 The III-V ICP The III-V ICP is a state-of-the-art etch tool. The combination of advanced hardware and software enables you to either use the optimized standard processes or to tailor etch processes for your specific needs. The tool can be used for etching of different materials, but is primarily intented for etching of III-V materials.
The user manual, user APV and contact information can be found in LabManager:
Equipment info in LabManager
Process information Etch recipes
An overview of the performance of the III-V ICP and some process related parameters
Purpose
Dry etch of
III-V materials such as GaAs, InP, GaN, AlGaAs, InGaAs or InGaAsP
Other materials such as Si, SiO2 or polymers on samples with III-V materials
Performance
Etch rates
InP: ~500 nm/min (depending on features size and etch load)
GaAs : 5-500 nm/min (depending on etch process, features size and etch load)
GaN: ~500 nm/min (depending on features size and etch load)
Anisotropy
Process parameter range
Process pressure
RF Generators
Coil power 1.5 kW
Platen power 600 W
Chiller temperature
Gas flows
N2 : 0-100 sccm
Ar: 0-100 sccm
SF6 : 0-100 sccm
O2 : 0-100 sccm
CF4 : 0-100 sccm
H2 : 0-100 sccm
CH4 : 0-100 sccm
BCl3 : 0-100 sccm
Cl2 : 0-100 sccm
HBr: 0-100 sccm
Substrates
Batch size
1 4" wafer per run
1 2" wafer per run
Or several smaller pieces on a carrier wafer with recess
Substrate material allowed
III-V wafers
Silicon wafers
with layers of silicon oxide or silicon (oxy)nitride
Quartz wafers
Possible masking material
Photoresist
E-beam resist
DUV resist
