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Annealing

At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N₂ atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.

Anneal with N₂ can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
Wet anneal with H₂O in a bubbler can be done in furnaces:C1 and C3.

Comparison of the seven annealing equipments

	A1 Boron drive-in	A3 Phosphorous drive-in	C1 Anneal oxide	C3 Anneal bond	C4 Anneal aluminium	Nobel furnace	RTP
General description	Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.	Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.	Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.	Annealing and oxidation of wafers from NIL.	Annealing of wafers with aluminium.	Annealing and oxidation of any material.	Rapid thermal annealing.
Annealing with N₂	x	x	x	x	x	x	x
Wet annealing with bubler (water steam + N₂)	.	.	x	x	.	.	.
Process temperature [ ^oC ]	800-1150	800-1150	800-1150	800-1150	800-1150	22-1000^oC	22-1000^oC
Batch size	max. 30 wafers of 4" or 2"	max. 30 4" wafers or 2" wafers	max. 30 wafers of 6",4" or 2"	max. 30 4" wafers or 2" wafers	max. 30 4" wafers or 2" wafers	30x4" or small pieces	1x4" or small pieces
Which wafers are allowed to enter the furnace:	A1 Boron drive-in	A3 Phosphorous drive-in	C1 Anneal oxide	C3 Anneal bond	C4 Anneal aluminium	Nobel	RTP
New clean* Si wafers 4" (6" in C1)	.	.	.	x	x	x	x
RCA clean** Si wafers with no history of Metals on	x	x	x	x	x	x	x
From Predep furnace directly (e.g. incl. Predep HF**)	From A2	From A4	x	x	x	x	x
Wafers directly from PECVD1	.	.	x	x	x	x	x
Wafers directly from NIL bonding	.	.	.	x	x	x	x
Wafers with aluminium	.	.	.	.	x	x	.
wafers with other metals	.	.	.		.	x	.
wafers with III-V materials							x

*New clean: only right from the new clean box. It is not allowed to put them in another box first.

**These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.

Comparison of the seven oxidation furnaces

	C1: Anneal Oxide	C3: Anneal Bond	Noble furnace	Jipelec RTP
General description	Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1.	Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.	Annealing of almost materials on silicon wafer.	Rapid thermal annealing
Annealing gas	N₂	N₂ Ar Wet annealing with bobbler (water steam + N₂)	N₂ Ar	N₂ Vacuum is possible
Process temperature	700 ^oC - 1100 ^oC	700 ^oC - 1150 ^oC	20 ^oC - 1000 ^oC	20 ^oC - 1000 ^oC Ramp up to 300 C/min
Substrate and Batch size	1-30 50 mm wafers 1-30 100 mm wafers 1-30 150 mm wafers	Small samples on carrier wafer, horizontal 1-30 50 mm wafers 1-30 100 mm wafers	Small samples on carrier wafer, horizontal 1-25 50 mm wafers 1-25 100 mm wafers, vertical and horizontal	Small samples on carrier wafer One 100 mm wafers on carrier wafer
Allowed materials	All processed wafers have to be RCA cleaned. Except for wafers from LPCVD furnaces and PECVD1.	All processed wafers have to be RCA cleaned. Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.	Almost all materials, permission is need.	III-V samples Silicon wafer Some metals