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• 10:24, 13 April 2011 Jml talk contribs uploaded File:WF 2E06 mar23B-060.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.21 recipe, Run ID 1925, time 120 secs, SF6 38, C4F8 75, 4mtorr, 800/50 coil/platen, -10 degs.)
• 10:24, 13 April 2011 Jml talk contribs uploaded a new version of File:WF 2E06 mar23B-030.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.21 recipe, Run ID 1925, time 120 secs, SF6 38, C4F8 75, 4mtorr, 800/50 coil/platen, -10 degs.)
• 10:22, 13 April 2011 Jml talk contribs uploaded File:WF 2E06 mar23B-030.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.21 recipe, Run ID 1925, time 120 secs, SF6 38, C4F8 75, 4mtorr, 800/50 coil/platen, -10 degs.)
• 14:22, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-150c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:22, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-150b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:22, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-150a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:22, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-120c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:21, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-120b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:21, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-120a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:21, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-090c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:21, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-090b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:21, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-090a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-060c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-060b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-060a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-030c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-030b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-030a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 14:18, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-150.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 14:18, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-120.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 14:17, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-090.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 14:17, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-060.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 14:17, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-030.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 14:32, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-150c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-150b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-150a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-120c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-120b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-120a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-090c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-090b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-090a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-060c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-060b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-060a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-030c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-030b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 14:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-030a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 12:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-150c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-150b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-150a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-120c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-120b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-120a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)