Specific Process Knowledge/Thermal Process/BCB Curing Oven

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BCB Curing Oven

The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metal in a nitrogen atmosphere.

During processing the furnace is rapidly heated by use of five halogen lamps below the sample. The furnace is purged with a controlable nitrogen flow. There is vacuum on the furnace.

The user manual, user APV, technical information and contact information can be found in LabManager:

The BCB Curing Oven. Located in the III-V Lab

BCB Curing Oven

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Equipment Resist Pyrolysis Furnace
Purpose
  • Pyrolysis of different resist layers to form conductive structures
Process parameter range Temperature
  • 0-1000oC
  • Temperature ramp-up rate: Max 10oC/min
  • Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
Nitrogen flows
  • Flow 1: Max 660 liter/hour
  • Flow 2: Max 3500 liter/hour
Substrates Batch size
  • Several small samples (placed on Si support wafers)
  • One-six 50 mm wafers (placed on Si support wafers)
  • One-six 100 mm wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Quartz
  • AZ resist (prebaked)
  • SU-8 (prebaked)