Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow

From LabAdviser
< Specific Process Knowledge‎ | Etch‎ | IBE⁄IBSD Ionfab 300
Revision as of 10:36, 31 July 2012 by BGE (talk | contribs) (New page: =Etch slow= This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min....)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow&oldid=6319"