Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.

	E-beam evaporation (Temescal)	Sputter deposition (Lesker)	Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description	E-beam deposition of Cu (line-of-sight deposition)	Sputter deposition of Cu (not line-of-sight deposition)	Sputter deposition of Cu (not line-of-sight deposition)
Pre-clean	Ar ion bombardment	RF Ar clean	RF Ar clean
Layer thickness	10Å to 1µm*	10Å to 1µm**	10Å to 1µm**
Deposition rate	1-10 Å/s	~ 1 Å/s	Depends on process parameters, at least up to 8.7 Å/s, see conditions here
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller pieces	smaller pieces Up to 1x6" wafers	Up to 10x4" or 6" wafers or many smaller pieces
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Almost any as long as they do not outgas if you are planning to heat the substrate. Check the cross-contamination sheets in Labmanager.
Comment

* To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

** To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

Studies of Cu deposition

Roughness of Cu layers - Roughness of Cu layers deposited with the Alcatel e-beam evaporator

Stress in sputtered Cu - Low stress in Cu films sputtered with the Sputter-System (Lesker)