Specific Process Knowledge/Thin film deposition/Deposition of Alumina

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Deposition of aluminium oxide

Aluminium oxide (Alumina, Al₂O₃) can be deposited by use of ALD (atomic layer deposition) or by sputtering. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.

• Al₂O₃ deposition using ALD
• Sputter-System(Lesker)
• Sputter-System Metal-Oxide(PC1)

Comparison of the methods for deposition of Alumium Oxide

	Sputter-System(Lesker)	Sputter-System Metal-Oxide(PC1)	ALD Picosun 200
Generel description	RF sputtering from Al2O3 target Reactive sputtering	RF sputtering from Al2O3 target Pulsed DC reactive sputtering Reactive HIPIMS (high-power impulse magnetron sputtering)	ALD (atomic layer deposition) of Al2O3
Stoichiometry	Not tested	Not tested	Al2O3, very good
Film Thickness	few nm - 200 nm	few nm - 200-300 nm	0nm - 100 nm
Deposition rate	0.3 nm/min	About 1.7 nm/min, depends on sputtering parameters	0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
Step coverage	unknown	unknown	Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature	Up to 400 °C	Up to 600 °C	150 °C - 350 °C:
More info on Al2O3		See deposition conditions	Al2O3 deposition using ALD
Substrate size	chips 1x 100 mm wafer 1x 150 mm wafer	chips 10x 100 mm wafer 10x 150 mm wafer	1-5 100 mm wafers 1-5 150 mm wafers Several smaller samples
Allowed materials	almost any	almost any that does not degas. Note special carrier for III-V materials. See cross-contamination sheet.	Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al2O3 Ti, TiO2 Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)