Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/Standard recipe with resist mask
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Revision as of 11:00, 14 December 2022 by Bghe (talk | contribs) (→Using different resist masks: results using the standard recipe for "Silicon oxide etch with resist mask")
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The standard recipe
The standard recipe for oxide etching with photo resist as masking material is called: SiO2_res. The parameters and results so fare are as follows:
Parameter | Recipe name: SiO2_res (SiO2 etch with resist mask) |
---|---|
Coil Power [W] | 1300 |
Platen Power [W] | 200 |
Platen temperature [oC] | 0 |
He flow [sccm] | 174 |
C4F8 flow [sccm] | 5 |
H2 flow [sccm] | 4 |
Pressure [mTorr] | 4 |
Etch rates in different materials using the standard "Silicon oxide etch with resist mask"
Material to be etched | Etch rate using SiO2_res |
---|---|
Thermal oxide | |
TEOS oxide (5% load) | 233nm/min ±0.7% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@nanolab |
PECVD1 (standard) oxide (5% load) | 242nm/min ±0.6% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@nanolab |
Silicon (10% load) | 32-36 nm/min - January 2019 bghe@nanolab |
Al2O3 from the ALD |
|
Silicon rich nitride from furnace B2 | 136nm was etched in 1min (whole wafer) - etched in October 2015 by bghe@nanolab |
Cr |
6 nm/min (1:33 to SiO2) fall 2016 by Martin Lind Ommen @nanotech see here |
Al |
25nm/min (1:8 to SiO2) fall 2016 by Martin Lind Ommen @nanotech see here |
Using different resist masks: results using the standard recipe for "Silicon oxide etch with resist mask"
. | Az5214E | MIR701 | nLof | KRF | CSAR |
---|---|---|---|---|---|
Selectivity to thermal oxide [:1] |
|
1.8 - tested November 2015 by BGHE | 2.0 - tested November 2015 by BGHE | ~2 - tested May 2013 by Christian Østergaard @nanotech. | . |
Profile [o] | ~90 - depends on the resist profile before etch, this was obtained with a negative process | . | . | . | . |
Roughness of the resist after etch - striation on sidewalls | see here | see here | see here | . | . |
Images | See here | . | . | See images here | . |
Comments | A negative resist process was done to make the mask. I have not had so good results with a positive resist process. | . | . | . | Using the standard oxide recipe (SiO2_res) for 1 min the CSAR looked burned and could not be removed by CSAR stripper (AR600-71). For a better recipe look here Tried again (2016-08-19 bghe) with 1min with CSAR resist and this time it did not look burned. |
Variations over the standard "SiO2 etch with resist mask" recipe
Parameter | Recipe name: SiO2_res (SiO2 etch with resist mask) | Variations over SiO2_res made in 2010 by BGHE |
---|---|---|
Coil Power [W] | 1300 | 1000-1600 |
Platen Power [W] | 200 | 150-300 |
Platen temperature [oC] | 0 | 0 |
He flow [sccm] | 174 | 174, 300 |
C4F8 flow [sccm] | 5 | 5 |
H2 flow [sccm] | 4 | 0, 4 |
Pressure [mTorr] | 4 | 2.3, 4 |
Typical results | Variations over SiO2_res made in 2010 by BGHE See results here |
---|---|
Etch rate of thermal oxide | ~160-340nm/min |
Selectivity to AZ resist [:1] | 2.7-4.3 |
Profile angle | 83-90 |
Images | See here |
Comments | . |