Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide

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Deposition of Hafnium Oxide

Thin films of hafnium oxide, HfO₂, can both be deposited both in the ALD1 and the ALD2 (PEALD). However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.

More information about hafnium oxide deposition can be found here: for ALD1 and for ALD2 (PEALD).

Deposition of hafnium oxide

	ALD1	ALD2 (PEALD).
Generel description	Atomic Layer Deposition	(Plasma enhanced) Atomic Layer Deposition
Stoichiometry	HfO₂	HfO₂
Film Thickness	0 nm - 100 nm	0 nm - 50 nm
Deposition rate	At 150 ^oC: 0.11 nm/cycle At 250 ^oC: 0.0827 nm/cycle	At 250 ^oC: 0.0804 nm/cycle At 250 ^oC on trenches: 0.954-1.22 nm/cycle
Step coverage	Very good.	Very good
Temperature window	150 ^oC - 300 ^oC	150 ^oC - 300 ^oC
Substrate size	1-5 100 mm wafers (only good uniformity for the top wafer) 1-5 150 mm wafer (only good uniformity for the top wafer) 1 200 mm wafer Several smaller samples	1 100 mm wafer 1 150 mm wafer 1 200 mm wafer Several smaller samples
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)	Silicon Silicon oxide, silicon nitride Quartz/fused silica Metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)