Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of silicon nitride using Lesker sputter system

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Revision as of 12:12, 23 April 2020 by Reet (talk | contribs) (altered name of sputter system to match LabManager now that we have a new Lesker sputter system...)
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The sputter-system(Lesker) can be use to deposit silicon nitride by reactive sputtering with a gas mixture of Ar and N2, where N2 is the reactive gas.

We have little experience with this so any information you obtain will be welcome.


Recipes on Sputter-System(Lesker) for deposition of silicon nitride

Recipes

The recipe below has been tried in the system. It is possible to change many of the parameters.

Recipe name Target Gun Power [W] Pressure [mTorr] RF substrate Power [W] Gas Temperature Deposition rate
source 3 DC with nitrogen Si 3 90 4 10 Ar+45%N2 RT ~1.7nm/min
source 1 DC with RF bias and nitrogen Si 1 180 4 No Ar+45%N2 RT ~4.25nm/min