Specific Process Knowledge/Thin film deposition/Deposition of AZO

From LabAdviser
Revision as of 11:32, 30 January 2017 by Paphol (talk | contribs) (Created page with "'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowled...")
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

Feedback to this page: click here

THIS PAGE IS UNDER CONSTRUCTION

AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.


E-beam evaporation (Lesker) Atomic layer deposition (ALD Picosun R200)
General description Sputter deposition of AZO Atomic layer deposition of AZO
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to
Deposition rate 2Å/s to 15Å/s ~0.3Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment

* For thicknesses above 200 nm permission is required.