Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic

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Isotropic etching in silicon on the ICP Metal Etch

Process parameters
Recipe Step Temp. Time Pres. Hardware Gasses RF powers Observations
SF6 O2 C4F8 Ar CF4 H2 CH4 BCl3 Cl2 HBr Coil Platen Runs Keywords
isoslow1 A 20 - 90 ? 50 ? 0 0 0 0 0 0 0 0 0 400 3 1 NA
r A 20 - 28 LF+B100 30 37 0 0 0 0 0 0 0 0 0 100 1 NA
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