Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy

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Scanning electron microscopy at Danchip

At Danchip there are four SEMs (scanning electron microscopes) that all cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication.

At the turn of the year 2015-2016 we made a reorganisation of the SEM's at Danchip. The old workhorse SEM's (the LEO and Supra 1) that have excellently served the users of the cleanroom for many years will be given new roles:

• The Leo SEM is a very reliable and rugged instrument that provides high quality images of most samples. It is exclusively dedicated to the users of the Raith E-beam lithography system so general imaging of user samples is no longer allowed.
• The SEM Supra 1 has been relocated to the basement with two purposes: Serving the users that have samples from outside the cleanroom and serving as training tool; all new SEM users with no/little SEM experience must be trained on this tool and gain basic knowledge (typically 10 hours of usage) here before being qualified for training on other SEM's.

The two remaining SEM's at Danchip (called SEM Supra 2 and SEM Supra 3) serve as general imaging tools in the cleanroom. Like Supra 1, they are VP models from Carl Zeiss and will produce excellent images on any sample. The possibility of operating at higher chamber pressures in the VP mode makes imaging of bulk non-conducting samples possible. The SEM Supra 2 is also equipped with an airlock and an EDX detector.

All four SEMs all manufactured by Carl Zeiss and have the same graphical user interface and very identical electron optics. But there are there are small hardware and software differences, thus a training is needed for each SEM you want to use.

Three SEMs are located in the cleanroom (SEM Supra 2, SEM Supra 3 and SEM LEO), and one SEM is located in the basement (SEM Supra 1).

Scanning electron microscopy at CEN

Please add some generals text about SEM at CEN.

Common challenges in scanning electron microscopy

• Sample mounting

Comparison of SEM's at Danchip

Equipment		SEM LEO	SEM Supra 1	SEM Supra 2	SEM Supra 3
Purpose	Imaging and measurement of	Conducting samples Semi-conducting samples Thin (~ 5 µm <) layers of non-conducting materials such as polymers	Conducting samples Semi-conducting samples Thin (~ 5 µm <) layers of non-conducting materials such as polymers Thick polymers, glass or quartz samples	Conducting samples Semi-conducting samples Thin (~ 5 µm <) layers of non-conducting materials such as polymers Thick polymers, glass or quartz samples	Conducting samples Semi-conducting samples Thin (~ 5 µm <) layers of non-conducting materials such as polymers Thick polymers, glass or quartz samples
	Other purpose	E-beam lithography using Raith Elphy Quantum system			Surface material analysis using EDX
Instrument Position		Cleanroom of DTU Danchip	Basement of DTU Danchip	Cleanroom of DTU Danchip	Cleanroom of DTU Danchip
Performance	Resolution	The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
		~ 5 nm (limited by vibrations)	1-2 nm (limited by vibrations)	1-2 nm (limited by vibrations)	1-2 nm (limited by vibrations)
Instrument specifics	Detectors	Secondary electron (Se2) Inlens secondary electron (Inlens) Backscatter electron (BSD)	Secondary electron (Se2) Inlens secondary electron (Inlens) 4 Quadrant Backscatter electron (QBSD) Variable pressure secondary electron (VPSE)	Secondary electron (Se2) Inlens secondary electron (Inlens) 4 Quadrant Backscatter electron (QBSD) Variable pressure secondary electron (VPSE)	Secondary electron (Se2) Inlens secondary electron (Inlens) High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB) Variable pressure secondary electron (VPSE)
	Stage	X, Y: 125 × 100 mm T: 0 to 90o R: 360o Z: 48 mm	X, Y: 130 × 130 mm T: -4 to 70o R: 360o Z: 50 mm	X, Y: 150 × 150 mm T: -10 to 70o R: 360o Z: 50 mm	X, Y: 130 × 130 mm T: -4 to 70o R: 360o Z: 50 mm
	Electron source	FEG (Field Emission Gun) source
	Operating pressures	Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)	Fixed at High vacuum (2 × 10-4mbar - 10-6mbar) Variable at Low vacuum (0.1 mbar-2 mbar)	Fixed at High vacuum (2 × 10-4mbar - 10-6mbar) Variable at Low vacuum (0.1 mbar-2 mbar)	Fixed at High vacuum (2 × 10-4mbar - 10-6mbar) Variable at Low vacuum (0.1 mbar-2 mbar)
	Options	Raith Elphy Quantum E-Beam Litography system	All software options available	Antivibration platform Fjeld M-200 airlock taking up to 8" wafers Oxford Instruments X-MaxN 50 mm2 SDD EDX detector and AZtec software package	High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
Substrates	Sample sizes	Wafers up to 6" (only full view up to 4")	Up to 6" wafer with full view	Up to 8" wafer with 6" view	Up to 6" wafer with full view
	Allowed materials	Any standard cleanroom materials	Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool	Any standard cleanroom materials	Any standard cleanroom materials

Comparison of the SEM's at CEN

	SEM Inspect S	SEM FEI Nova 600 NanoSEM	SEM FEI Quanta 200 ESEM FEG	FIB-SEM FEI QUANTA 200 3D	Dual Beam FEI Helios Nanolab 600
Purpose	A	B	C	D	E
Equipment position	CEN Building 314	CEN Building 314	CEN Building 314	CEN Building 307 Room 111	CEN Building 314
Instrument resolution	A	B	C	D	E
Detectors	ETD Secondary Electrons BSED Back Scatter Electrons LVD/LFD Low Vac SE EDS X Ray by energy WDS X Ray by wavelength STEM Scanning Transmission Electron Microscopy	ETD/TLD Secondary Electrons BSED Back Scatter Electrons LVD/LFD Low Vac SE Helix Low Vac SE EDS X Ray by energy EBSD Electron Back Scatter Diffraction TKD Transmission Kikuchi Diffraction STEM Scanning Transmission Electron Microscopy GAD Low Vac BSED	ETD Secondary Electrons BSED Back Scatter Electrons LVD/LFD Low Vac SE GSED ESEM SE EDS X Ray by energy STEM Scanning Transmission Electron Microscopy	ETD Secondary Electrons BSED Back Scatter Electrons LVD/LFD Low Vac SE STEM Scanning Transmission Electron Microscopy GAD Low VAC BSED GSED ESEM SE	ETD/TLD Secondary Electrons ABS Annular BSED EDS X Ray by energy EBSD Electron Back Scatter Diffraction CDEM Continuos Dinode Electron Multiplier
Stage specifications	X 50mm Y 50mm Z 50mm R 360⁰ T 70⁰ Manual	X 150mm Piezo Y 150mm Piezo Z 10mm R 360⁰ Piezo T 70⁰	X 50mm Y 50mm Z 50mm R 360⁰ T 70⁰ Manual	X 100mm Y 100mm Z 50mm R 360⁰ T 70⁰	X 150mm Piezo Y 150mm Piezo Z 10mm R 360⁰ Piezo T 70⁰
Options	A	B	C	D	E
Max sample size	Consult with CEN staff as weight, dimensions, pumping capacity and technique all play a roll in the sample size