Specific Process Knowledge/Bonding
Choose bonding method
- Eutectic bonding
- Fusion bonding
- Anodic bonding
Comparing the three bonding methods
| . | Eutectic bonding | Fusion bonding | Anodic bonding |
|---|---|---|---|
| General description | For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials). | For bonding two identical materials eg. Si/Si. | For bonding Si and Glass. |
| Bonding temperature | Depending on the eutecticum 310C to 400C. | Depending on defects 50C to 400C. | Depending on the voltage 300C to 500C Standard is 400C. |
| Annnealing temperature | No annealing | 1000C in the bond furnace C3 | No annealing |
| Max. scan range z | <100Å to~0.3mm | 50Å to 262µm | 1 µm (can go up to 5 µm under special settings) |
| Resolution xy | up to 5900 data points per profile | down to 0.067 µm | Depending on scan size and number of samples per line and number of lines - accuracy better than 2% |
| Resolution z | 1Å or 25Å | 1Å, 10Å or 20Å | <1Å - accuracy better than 2% |
| Max. scan depth [µm] (as a function of trench width W) | 0.87(W[µm]-5µm) | 1.2(W[µm]-5µm) | ~1 with standard cantilever. |
| Tip radius | 5 µm 60o cone | 5 µm 45o cone | <12 nm on standard cantilever |
| Stress measurement | Can be done | Can be done | Cannot be done |
| Surface roughness | Can be done on a line scan | Can be done on a line scan | Can be done on a selected surface area |
Choose equipment
- Speedline manual spinner - For spinning of PMMA and Topas