Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong

From LabAdviser


bad

bad

bad

bad

bad

Date

Feb122013

Feb122013

Feb122013

Feb122013

Feb122013

Metal ICP  recipe

pxSiO2try1

pxSiO2try1

pxSiO2try1

pxSiO2try2

pxSiO2try2

Wafer size and ID

6inch

6A

6inch

6A1_feb112013

6inch,

6A2_feb112013

6inch,

6A3_feb112013

6inch,

6A4_feb112013

Mask

Blank Si dummy test

Blank apox, 3539nm

Blank KRF 347.9nm

Blank KRF 345nm

Blank  apox 4623m

Etch time

2min

2min

1min

1min

1min

Pressure [mTorr]

8

8

8

20

20

C4F8 flow [sccm]

20

20

20

20

CF4 flow [sccm]

40

40

40

40

40

H2 flow [sccm]

20

20

20

20

20

Coil Power [W]

800

800

800

800

800

Platen Power [W]

200

200

200

200

200

Platen temperature [oC]

20

20

20

20

20

Coil match

59%, 27%

59%, 27%

59%, 27%

48%, 29%

48%, 29%

Platen Match

45%, 56%

45%, 56%

45%, 56%

52%, 60%

52%, 60%

Throde valve opening rate

16%

16%

16%

10.7%

10.7%

Etch rate

µm/min

Wf center  238µm/min

Wafer  edge  230nm/min

Wafer center 170.5nm/min

1cm from wf edge , 204.1nm/min

Wf center  80.4µm/min

Wafer  edge  119.6nm/min

Wafer center 128.26nm/min, 1cm from wafer  edge 123.09nm/min

Distance from wf cent (mm)

Seletivity at cent

Remaining APOX thickness nm

Wf center 3062nm

1cm from wf edge: 3079nm

Wf center nm

Too much polymer in sem

Comments

 


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by reist mask try<o:p></o:p>

Date<o:p></o:p>

Feb252013<o:p></o:p>

Feb252013<o:p></o:p>

Feb262013<o:p></o:p>


on 62nmBarc on 1190nm apox<o:p></o:p>

780nm resist on 62nmBarc on 492nm apox, first etch barc 20sec by Ox plasma<o:p></o:p>

440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma<o:p></o:p>






rate<o:p></o:p>

10%<o:p></o:p>

13.6%<o:p></o:p>

17%<o:p></o:p>

71degree<o:p></o:p>

Too much polymer, etch Si too much<o:p></o:p>

Etch through 500nm apox, then etch Si 180nm,<o:p></o:p>

Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm<o:p></o:p>

Low pressure gives

better profile, less polymer, however, CF4 etch Si too quick<o:p></o:p>

<o:p> </o:p>

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