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Purpose, location and technical specifications

The Raith Elphy system is a pattern generator built onto the LEO Scanning Electron Microscope (SEM) in cleanroom F-2. All users must therefore acquire license to use the SEM LEO before acquiring license to the Raith Elphy system.

Techical Specification

The system can be characterized as follows:

Electron-beam scanning speeds, f, up to X MHz are available (which is maximum scan speed).
The acceleration voltage is maximum 25 kV.
The maximum field-size without stitching is X µm x Y µm.
The machine has a chip holder that fits to 2 - 3 chips with sizes of approximately 1 x 1 cm2 each. A larger chip or wafer can also be mounted on a holder without a Faraday's cup.

Mounting of chips or wafers into chamber



Chip holder to Raith Elphy E-beam writer system; the holder has three clamps to hold up to 3 chips and a Faraday's cup to measure beam current.