Specific Process Knowledge/Thin Film deposition/ALD/Al2O3 deposition using ALD
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The ALD window for depostion of Al2O3 ranges from 150 oC to 350 oC. XPS measurements shows that at temperatures below 150 oC the Al2O3 will be contaminated by unreacted TMA molecules, and at temperatures above 350 oC the TMA decomposes.
The deposition rate for Al2O3 depends on the temperature, see the graph below.
In the graphs below the Al2O3 thickness as function of number of cycles for deposition temperatures between 150 oC and 350 oC can be seen. From the equations the number of cycles required for a certain thickess can be calculated. The results have been obtained using the "AL2O3" recipe:
Recipe name: AL2O3
Temperature: 150 oC - 350 oC
TMA | H2O | |
---|---|---|
Nitrogen flow | 150 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s |
Purge time | 3.0 s | 4.0 s |
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The LVD detector provides a large field of view and great depth of focus also at low magnification.
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Close-up of the image to the left. The resolution is great.
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Close-up of the image to the left. The resolution is excellent.
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Close-up of the image to the left. The resolution is excellent.
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Close-up of the image to the left. The resolution is excellent.
Evgeniy Shkondin, DTU Danchip, February-March 2014.