Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch
Results from the acceptance test in February 2011
Acceptance test for Au etch:
. | Acceptance Criteria |
Acceptance Results |
---|---|---|
Substrate information |
|
. |
Material to be etched |
|
. |
Mask information |
|
. |
Features to be etched |
|
. |
Etch depth |
|
|
Etch rate |
|
|
Etch rate uniformity |
|
|
Reproducibility |
|
|
Selectivity (Au etch rate/ZEP etch rate) |
|
|
Etch profile |
|
|
Process parameters for the acceptance test
Parameter | Au etch acceptance |
---|---|
Neutalizer current [mA] | 550 |
RF Power [W] | 1300 |
Beam current [mA] | 500 |
Beam voltage [V] | 600 |
Beam accelerator voltage | 400 |
Ar flow to neutralizer [sccm] | 5.0 |
Ar flow to beam [sccm] | 10.0 |
Rotation speed [rpm] | 20 |
Stage angle [degrees] | 30 |
Some SEM profile images of the etched Au
IBE Au etch with Ti mask
Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.
Ti etch test with Zep520A as mask - To etch the Ti mask | Au etch test with high selectivity to Ti | |
---|---|---|
Generel description | Generel description - method 1 | Generel description - method 2 |
Recipe name |
test Ti acceptance 20111129 |
Au_acceptance_with_O2 |
IBE parameters |
|
|
Results | ||
Etch rate in resist |
12.8nm/min (15-12-2011) |
72nm/min (13-12-2011) |
Etch rate in Au |
32.7nm/min (15-12-2011) |
42.6nm/min (13-12-2011) |
Etch rate in Ti |
8.3nm/min (15-12-2011) |
4.3nm/min (13-12-2011) |
Selectivity Ti/Zep |
0.65 (15-12-2011) |
0.06 (13-12-2011) |
Selectivity Au/Ti |
3.9nm/min (15-12-2011) |
9.9nm/min (13-12-2011) |